Industry's First and Only High-Density, Surface-Mount, Single-Piece NV SRAM Modules with Integrated Reflowable Battery
| Note to Editor: Maxim/Dallas Semiconductor is the first and only company offering an NV SRAM with a reflowable battery in a single-piece solution: the DS2070/DS3070. Competitors' solutions must either be hand soldered or are available as a two-piece surface-mount solution, which requires additional assembly steps and costs. The DS2070/DS3070 do not need these additional assembly steps, which reduces production time and costs. The DS2070/DS3070 are available in multiple densities, all with the same pinout and footprint so applications have the flexibility to grow in density without major redesign. |
DALLAS, TX—November 30, 2006—Dallas Semiconductor, a wholly owned subsidiary of Maxim Integrated Products (NASDAQ: MXIM), introduces the industry's first high-density, single-piece, surface-mount nonvolatile (NV) SRAM modules with integrated reflowable battery: the DS2070W+100 (2M x 8 bits) and the DS3070W+100 (2M x 8 bits with an integrated RTC).
The DS2070W/DS3070W NV SRAM modules are, quite simply, unlike any other NV SRAM modules on the market. These devices integrate a reflowable battery into a single-piece solution. Handling these modules in standard assembly processes is uncomplicated and convenient; they can be picked and placed from their shipping trays using existing pick-and-place machines. These modules are also compatible with standard SMT processes and withstand a peak reflow temperature of +225°C (+0/-5°C) for 30 seconds. After reflow, the modules can be washed in an aqueous-based cleaning solution with no special precautions.
The importance of the DS2070/DS3070's reflowable battery is best understood when compared to a traditional two-piece, surface-mount competitive solution. A two-piece surface-mount solution requires additional assembly steps and costs: special care must be taken when handling the battery, as the primary battery cell currently used in the industry cannot be reflowed. Hence, the base (without the battery) is first reflowed, and then the assembly containing the battery is manually placed at the end of an assembly process. By eliminating these additional assembly steps, the DS2070W/DS3070W, reduce both production time and costs.
The DS2070W/DS3070W, fully integrated, convenient modules, protect mission-critical data from unexpected power loss by utilizing intelligent circuitry to constantly monitor Vcc. Whenever Vcc is applied to a module, it recharges the internal manganese-lithium battery, powers the SRAM from the external power source, and allows the contents of the SRAM to be modified. When an out-of-tolerance condition occurs, the battery automatically switches on and write protection is unconditionally enabled to prevent data corruption. There is no limit to the number of write cycles that can be executed, and no additional support circuitry is required for microprocessor interfacing.
The DS2070W/DS3070W single-piece NV SRAM modules are fully static memories similar in organization and function to the Company's existing single piece NV SRAM modules. These modules can be used in place of SRAM, EEPROM, or flash components, and they are available in densities from 32k x 8 bits to 2M x 8 bits. All densities have the same footprint and pinout, giving applications the flexibility to grow in density without major redesign.
The DS2070W/DS3070W are available in a RoHS-compliant, 27mm x 27mm, 256-ball BGA package, which is completely sealed from the outside environment. These devices are specified for use over the -40°C to +85°C industrial temperature range. Prices start at $38.41 for the DS2070W+100 and $42.25 for the DS3070W+100 (1000-up, FOB USA).
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