* MAX4475 MACROMODEL
* ----------------------------
* Revision 1. 5/2004
* ----------------------------
* The MAX4475 wideband, low noise, low distortion opamps operates from single 
* +2.7V to 5.5V Supply, feature ground sensing inputs and rail to rail outputs
* and are unity gain stable
* ----------------------------
* Connections
*       1 = OUT
*       2 = V-
*       3 = IN+
*       4 = IN-
*       5 = SD\ 
*       6 = V+  
*-----------------------------

**************************************************
.SUBCKT MAX4475 1 2 3 4 5 6
 XOPAMP 1 2 3 4 5 6 MAX4475_S
.ENDS
**************************************************
.SUBCKT MAX4475_S 201 18 17 15 103 10
**************************************************
*    17 = IN+
*    18 = V-
*    15 = IN-
*    201 = OUT
*    10 = V+
*    103= SHDN\
***************
*INPUT STAGE
VS1 10 11 0V
GBIAS 11 12 304 100 45.25U 
M1 13 16 12 11 MOSFET
M2 14 15 12 11 MOSFET
DBIAS 18 12 DY
VOS 17 16 70U
RD1 13 18 1K    
RD2 14 18 1K
C1 13 14 2.0P
CIN1 16 100 10P
CIN2 15 100 10P     
DIN1 16 11 DA
DIN2 18 16 DA
DIN3 15 11 DA
DIN4 18 15 DA
FSUP 18 10 VS1 1 
**************
*INPUT BIAS CURRENT 
IBIAS1 12 16 0.1P
IBIAS2 12 15 0.1P
RID 15 16 1000G 
**************
**************************************************
*GAIN STAGE 
GA 25 100 14 13 5.105M  
RO1 25 100 2.541K
GB 26 100 25 100 710M
RO2 26 100 1K
EF 27 100 26 100 1
CC 25 27 70P
EF2 29 100 28 100 1   
GC 100 28 26 100 52.16M
RO3 28 100 2.7K
CC2 25 29 77.3P
RO4 28 30 20
GCMPS 100 25 40 100 393.5U 
**************
*CURRENT LIMIT
DP3 26 38 DY
EP3 38 100 10 18 185M
DP4 39 26 DY
EP4 100 39 10 18 185M
**************
*INTERNAL GND
EG1 100 18 10 18 0.5
**************
*VOLTAGE LIMITING
VS2 30 31 0V
*****
DP1 30 32 DY 
HP1 34 32 VS2 17.72
EP1 34 36 10 18 0.5
VOFF1 100 36 12M
*****
DP2 33 30 DY
HP2 35 33 VS2 14.43
EP2 37 35 10 18 0.5
VOFF2 37 100 12.8M
***************
*CMRR
RRR 40 100 1
GCMR 40 100 12 18 23.07U
*PSRR
GPSR 100 40 10 18 24.5U
***************
*SUPPLY CURRENT
ISUP 10 18 0.01U
GSUP 10 18 304 100 2.5M
***************
*FOR SHUTDOWN
MEN1 171 172 31 10 MOSFETP
MEN2 171 173 31 18 MOSFETN
EEN3 170 172 304 100 10
EEN4 173 170 304 100 10
RSHUNT 170 171 10MEG
VIS5 171 201 0V
********************************
RSH 103 18 500MEG
ISH 18 103 10NA
DSH 103 10 DY
CSH 103 18 10P
**************
EEN2 300 100 103 18 1
REN 300 301 10K
VEN 301 302 0V
EHYST 303 302 POLY(2) 10 18 304 100 0 0 0 0 0.4
EEN1 303 100 10 100 0.7
**************
FEN1 100 304 VEN 2
CEN 304 100 1P
DEN1 100 304 DY
DEN2 304 305 DY
VLIM1 305 100 1V
**************************************************
.MODEL DA D(IS=100E-14 RS=0.5k)
.MODEL MOSFET PMOS(VTO=-0.2 KP=22.1E-3 KF=4.0E-27 AF=0.8)
.MODEL DX D(IS=100E-14)
.MODEL DY D(IS=100E-14 N=10M)
.MODEL MOSFETP PMOS(VTO=-5.0  KP=88E-3 GAMMA=0.01)
.MODEL MOSFETN NMOS(VTO=5.0  KP=88E-3 GAMMA=0.01)
**************************************************
.ENDS