The MAX1385/MAX1386 set and control bias conditions for dual RF LDMOS power devices found in cellular base stations. Each device includes a high-side current-sense amplifier with programmable gains of 2, 10, and 25 to monitor LDMOS drain current over the 20mA to 5A range. Two external diode-connected transistors monitor LDMOS temperatures while an internal temperature sensor measures the local die temperature of the MAX1385/MAX1386. A 12-bit ADC converts the programmable-
gain amplifier (PGA) outputs, external/internal temperature readings, and two auxiliary inputs.
The two gate-drive channels, each consisting of 8-bit coarse and 10-bit fine DACs and a gate-drive amplifier, generate a positive gate voltage to bias the LDMOS devices. The MAX1385 includes a gate-drive amplifier with a gain of 2 and the MAX1386 gate-drive amplifier provides a gain of 4. The 8-bit coarse and 10-bit fine DACs allow up to 18 bits of resolution. The MAX1385/MAX1386 include autocalibration features to minimize error over time, temperature, and supply voltage.
The MAX1385/MAX1386 feature an I²C/SPI™-compatible serial interface. Both devices operate from a 4.75V to 5.25V analog supply (3.2mA supply current), a 2.7V to 5.25V digital supply (3.1mA supply current), and a 4.75V to 11.0V gate-drive supply (4.5mA supply current). The MAX1385/MAX1386 are available in a 48-pin thin QFN package.
* Some packages have variations, listed on the drawing. "PkgCode/Variation" tells which variation the product uses. Note that "+", "#", "-" in the part number suffix describes RoHS status. Package drawings may show a different suffix character.
Devices:
1-4 of 4
MAX1385
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Status
Package:
TYPE PINS FOOTPRINT
DRAWING CODE/VAR *
Temp
RoHS/Lead-Free? Materials Analysis
MAX1385BUTM+T
Active
Land Pattern: Not Available
0°C to +85°C
See data sheet
MAX1385BETM+T
Active
Land Pattern: Not Available
-40°C to +85°C
See data sheet
MAX1385BETM+
Active
TQFN;48 pin;50.4 mm²
Outline Drawing: 21-0144 (PDF)
Land Pattern: 90-0039 (PDF)
Use pkgcode/variation: T4877M+6*