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DS1225Y
64K Nonvolatile SRAM

Recommended Upgrades for New Designs
Part Number Replacement Explanation
DS1225Y DS1225AD

1) Write-Protection voltage (Vtp) on the DS1220Y and DS1225Y are determined by an internal voltage-divider circuit (~1.26 x VBat). As the internal battery in the module degrades, the corresponding Vtp also degrades, resulting in a change in the response of the module to system power loss. The AB/AD versions have a precision band-gap reference voltage that is independent of the battery.

2) Storage and handling of battery-backed products can be critical to achieve the expected 10 years of potential data retention from a new module. The DS1220Y and DS1225Y do not contain the Freshness Seal circuitry, which means the 10 year warranty begins with date of manufacture, as opposed to the date of customer's first use on AB/AD versions.

DS1225Y-200+ DS1225AD
DS1225Y-200IND+ DS1225AD
DS1225Y-150+ DS1225AD
DS1225Y-150IND+ DS1225AD
DS1225Y-170+ DS1225AD
DS1225Y-200 DS1225AD
DS1225Y-200IND DS1225AD
DS1225Y-150 DS1225AD
DS1225Y-150IND DS1225AD
DS1225Y-170 DS1225AD


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Description
FULL DATA SHEET (PDF, 160kB)
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The DS1225Y 64k Nonvolatile SRAM is a 65,536-bit, fully static, nonvolatile RAM organized as 8192 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a condition occurs, the lithium energy source is automatically switched on and write protection is unconditionally enabled to prevent data corruption. The NV SRAM can be used in place of existing 8k x 8 SRAMs directly conforming to the popular bytewide 28-pin DIP standard. The DS1225Y also matches the pinout of the 2764 EPROM or the 2864 EEPROM, allowing direct substitution while enhancing performance. There is no limit on the number of write cycles that can be executed and no additional support circuitry is required for microprocessor interfacing.

Key Features
  • 10 years minimum data retention in the absence of external power
  • Data is automatically protected during power loss
  • Directly replaces 2k x 8 volatile static RAM or EEPROM
  • Unlimited write cycles
  • Low-power CMOS
  • JEDEC standard 28-pin DIP package
  • Read and write access times as fast as 150ns
  • Full ±10% operating range
  • Optional industrial temperature range of -40°C to +85°C, designated IND

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    2007-12-20
    This page last modified: 2008-01-02



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