All versions are being discontinued and are subject to Last Time Buy, after which new orders can not be placed. See Ordering Information for recommended replacements.
The DS2016 2k x 8 3V/5V operation static RAM is a 16,384-bit, low-power, fully static random access memory organized as 2048 words by 8 bits using CMOS technology. The device operates from a single power supply with a voltage input between 2.7V and 5.5V. The chip enable input (active-low CE) is used for device selection and can be used in order to achieve the minimum standby current mode, which facilitates both battery operated and battery backup applications. The device provides access times as fast as 100ns when operated from a 5V power supply input and also provides relatively good performance of 250ns access while operating from a 3V input. The device maintains TTL-level inputs and outputs over the input voltage range of 2.7V to 5.5V. The DS2016 is most suitable for low-power applications where battery operation or battery backup for nonvolatility is required. The DS2016 is a JEDEC-standard 2k x 8 SRAM and is pin-compatible with ROM and EPROM of similar density.
Key Features
Low-power CMOS design
Standby current
50nA max at tA = 25°C VCC = 3.0V
100nA max at tA = 25°C VCC = 5.5V
1µA max at tA = +60°C VCC = 5.5V
Full operation for VCC = 5.5V to 2.7V
Data retention voltage = 5.5V to 2.0V
Fast 5V access time
DS2016-100 100ns
Reduced-speed 3V access time
DS2016-100 250ns
Operating temperature range of -40°C to +85°C
Full static operation
TTL compatible inputs and outputs over voltage range of 5.5V to 2.7V
Available in 24-pin DIP and 24-pin SO packages
Suitable for both battery operated and battery backup applications
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