The DS1265 8M Nonvolatile SRAMs are 8,388,608-bit, fully static nonvolatile SRAMs organized as 1,048,576 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a condition occurs the lithium energy source is automatically switched on and write protection is unconditionally enabled to prevent data corruption. There is no limit on the number of write cycles which can be executed and no additional support circuitry is required for microprocessor interfacing.
Key Features
10 years minimum data retention in the
absence of external power
Data is automatically protected during power
loss
Unlimited write cycles
Low-power CMOS operation
Read and write access times as fast as 70ns
Lithium energy source is electrically
disconnected to retain freshness until power is
applied for the first time
Full ±10% VCC operating range (DS1265Y)
Optional ±5% VCC operating range
(DS1265AB)
Optional industrial temperature range of
-40°C to +85°C, designated IND
Notes: **This pricing is BUDGETARY, for comparing similar parts. Prices are in
U.S. dollars and subject to change. Quantity pricing may vary
substantially and international prices may differ due to local
duties, taxes, fees, and exchange rates. For volume-specific prices
and delivery, please see the price and availability page
or contact an authorized distributor.
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