The DS1258 128k x 16 nonvolatile (NV) SRAMs are 2,097,152-bit fully static, NV SRAMs, organized as 131,072 words by 16 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry that constantly monitors VCC for an out-of-tolerance condition. When such a condition occurs the lithium energy source is automatically switched on and write protection is unconditionally enabled to
prevent data corruption. DIP-package DS1258 devices can be used in place of solutions that build NV 128k x 16 memory by utilizing a variety of discrete components. There is no limit on the number of write cycles that can be executed and no additional support circuitry is required for microprocessor interfacing.
Key Features
10-Year Minimum Data Retention in the
Absence of External Power
Data is Automatically Protected During a
Power Loss
Separate Upper Byte and Lower Byte Chip-Select
Inputs
Unlimited Write Cycles
Low-Power CMOS
Read and Write Access Times as Fast as 70ns
Lithium Energy Source is Electrically
Disconnected to Retain Freshness Until
Power is Applied for the First Time
Full ±10% Operating Range (DS1258Y)
Optional ±5% Operating Range (DS1258AB)
Optional Industrial Temperature Range of
-40°C to +85°C, Designated IND
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