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MAX2601, MAX2602
3.6V, 1W RF Power Transistors for 900MHz Applications


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Status
Active: In Production.

Data Sheet
FULL DATA SHEET (PDF, 96kB)
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Description
The MAX2601/MAX2602 are RF power transistors optimized for use in portable cellular and wireless equipment that operates from three NiCd/NiMH cells or one Li-Ion cell. These transistors deliver 1W of RF power from a 3.6V supply with efficiency of 58% when biased for constant-envelope applications (e.g., FM or FSK). For NADC (IS-54) operation, they deliver 29dBm with -28dBc ACPR from a 4.8V supply.

The MAX2601 is a high-performance silicon bipolar RF power transistor. The MAX2602 includes a high-performance silicon bipolar RF power transistor, and a biasing diode that matches the thermal and process characteristics of the power transistor. This diode is used to create a bias network that accurately controls the power transistor’s collector current as the temperature changes.

The MAX2601/MAX2602 can be used as the final stage in a discrete or module power amplifier. Silicon bipolar technology eliminates the need for voltage inverters and sequencing circuitry, as required by GaAsFET power amplifiers. Furthermore, a drain switch is not required to turn off the MAX2601/MAX2602. This increases operating time in two ways: it allows lower system end-of-life battery voltage, and it eliminates the wasted power from a drain-switch device.

The MAX2601/MAX2602 are available in thermally enhanced, 8-pin SO packages, which are screened to the extended temperature range (-40°C to +85°C).

An evaluation kit is available:  MAX2602EVKIT  

Key Features   Applications/Uses
  • Low Voltage: Operates from 1 Li-Ion or 3 NiCd/NiMH Batteries
  • DC-to-Microwave Operating Range
  • 1W Output Power at 900MHz
  • On-Chip Diode for Accurate Biasing (MAX2602)
  • Low-Cost Silicon Bipolar Technology
  • Does Not Require Negative Bias or Supply Switch
  • High Efficiency: 58%

 
  • 915MHz ISM Transmitters
  • AMPS Cellular Phones
  • CDPD Modems
  • Digital Cellular Phones
  • Land Mobile Radios
  • Microcellular GSM (Power Class 5)
  • Narrow-Band PCS (NPCS)
  • Two-Way Paging

    Key Specifications:  Power Amplifiers/Drivers
    Part Number Features Footprint
    (mm x mm)
    Package/Pins Price
    See Notes
    MAX2601 
    11.6dB Power Gain
    58% Efficiency
    4.9 x 6.0
    SOIC(N)-EP/8
    $2.32 @1k
    MAX2602 
    11.6dB Power Gain
    58% Efficiency
    Integrated Diode for Accurate Biasing
    SOIC(N)-EP/8
    $2.38 @1k
    See All Power Amplifiers/Drivers (9)

    Diagram
    MAX2601, MAX2602: Pin Configuration
    Pin Configuration

    Application Notes
  • Application Note 335: Maxim Wireless/RF Power Amplifier Selector Guide - MAX2601, MAX2602

    Evaluation Kits
  • MAX2602EVKIT

    Design Guides
  • Wireless (PDF)

    Reliability Reports
  • Show FIT data for:
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    Software/Models
    none

    Ordering Information
    Notes:

    1. Other options and links for purchasing parts are listed at: http://www.maxim-ic.com/sales.
    2. Didn't Find What You Need? Ask our applications engineers. Expert assistance in finding parts, usually within one business day.
    3. Part number suffixes: T or T&R = tape and reel;+ = RoHS/lead-free;# = RoHS/lead-exempt. More: SeeFull Data Sheet or Part Naming Conventions.
    4. * Some packages have variations, listed on the drawing. "PkgCode/Variation" tells which variation the product uses. Note that "+", "#", "-" in the part number suffix describes RoHS status. Package drawings may show a different suffix character.


    Devices: 1-9 of 9

    MAX2601 Free
    Sample
    Buy Status
    Package: TYPE PINS FOOTPRINT
      DRAWING CODE/VAR *
    Temp RoHS/Lead-Free?
    Materials Analysis
    MAX2601ESA    
    Active SOIC(N)-EP;8 pin;30.9 mm²
    Outline Drawing: 21-0111 (PDF)
    Land Pattern: 90-0150 (PDF)
    Use pkgcode/variation: S8E-12*
    -40°C to +85°C RoHS/Lead-Free: No
    Materials Analysis
    MAX2601ESA-T    
    Active

    Land Pattern: Not Available

    -40°C to +85°C See data sheet
    MAX2601ESA+  
    Active SOIC(N)-EP;8 pin;30.9 mm²
    Outline Drawing: 21-0111 (PDF)
    Land Pattern: 90-0150 (PDF)
    Use pkgcode/variation: S8E+12*
    -40°C to +85°C RoHS/Lead-Free: Lead Free
    Materials Analysis
    MAX2601ESA+T    
    Active SOIC(N)-EP;8 pin;30.9 mm²
    Outline Drawing: 21-0111 (PDF)
    Land Pattern: 90-0150 (PDF)
    Use pkgcode/variation: S8E+12*
    -40°C to +85°C RoHS/Lead-Free: Lead Free
    Materials Analysis
    MAX2602 Free
    Sample
    Buy Status
    Package: TYPE PINS FOOTPRINT
      DRAWING CODE/VAR *
    Temp RoHS/Lead-Free?
    Materials Analysis
    MAX2602E/D    
    Active DICE SALES;NA pin;0 mm²

    Land Pattern: Not Applicable
    Use pkgcode/variation: DICE*
    See data sheet
    MAX2602ESA    
    Active SOIC(N)-EP;8 pin;30.9 mm²
    Outline Drawing: 21-0111 (PDF)
    Land Pattern: 90-0150 (PDF)
    Use pkgcode/variation: S8E-12*
    -40°C to +85°C RoHS/Lead-Free: No
    Materials Analysis
    MAX2602ESA-T    
    Active

    Land Pattern: Not Available

    -40°C to +85°C See data sheet
    MAX2602ESA+  
    Active SOIC(N)-EP;8 pin;30.9 mm²
    Outline Drawing: 21-0111 (PDF)
    Land Pattern: 90-0150 (PDF)
    Use pkgcode/variation: S8E+12*
    -40°C to +85°C RoHS/Lead-Free: Lead Free
    Materials Analysis
    MAX2602ESA+T    
    Active SOIC(N)-EP;8 pin;30.9 mm²
    Outline Drawing: 21-0111 (PDF)
    Land Pattern: 90-0150 (PDF)
    Use pkgcode/variation: S8E+12*
    -40°C to +85°C RoHS/Lead-Free: Lead Free
    Materials Analysis

    Notes and Comments
    • 3.6V, 1W power transistor in a thermally enhanced package (MAX2601)
    • 3.6V, 1W power transistor with an on-chip thermally matched bias diode (MAX2602)

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    Document Ref.: 19-1185; Rev 3; 2009-02-11
    This page last modified: 2009-11-05


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