Search Results: GaAs

Smart IC Maintains Uniform Bias Current For GaAs MESFETs ... [Open results in new window]
... キーワード: MESFETs, Gallium-Arsenide, GaAs MESFETs, current sense amps, current
sensing, mesfet, metal semiconductor field effect transistors. ...
japan.maxim-ic.com/appnotes.cfm/an_pk/1800 - 20k

QuickChip Design Example 2Low Power Silicon BJT LNA for 1.9GHz ... [Open results in new window]
... In a number of recent papers low power LNAs for S-band have been described
[1,2,3]. These LNAs were fabricated using some sophisticated GaAs full-custom ...
japan.maxim-ic.com/appnotes.cfm/an_pk/644 - 24k

[PDF] EJ39 J [Open results in new window]
... バイアスノイズはRF出力に現れ、希望の信号と共にアン
テナから放射されます。GaAs PAはディプリーション ... BIAS µC GaAs ...
pdfserv.maxim-ic.com/jp/an/A3908J.pdf

Circuit Tradeoffs Minimize Noise in Battery-Input Power Supplies ... [Open results in new window]
... The gate-bias generator for a GaAs MESFET offers a good example of low-noise
requirements in a power supply. A typical GaAs transmitter ...
japan.maxim-ic.com/appnotes.cfm/an_pk/653 - 41k

VCO技術の発展の歴史 - マキシム [Open results in new window]
... VCOからは除外されています。) 最初のモノリシックVCOは、ガリウムヒ素(
GaAs) IC技術とモノリシックマイクロ波IC (MMIC ...
japan.maxim-ic.com/appnotes.cfm/an_pk/1768/ - 51k

Ultra-Thin DC-DC Converters Suit Compact PCMCIA Cards ... [Open results in new window]
... For example, a wireless PCMCIA card that employs GaAs FETs in the RF transmitter-
output stage requires a low-noise negative-bias voltage at -4.1V. The voltage ...
japan.maxim-ic.com/appnotes.cfm/an_pk/658 - 36k

PINダイオードと電流ソースDACがRF ... [Open results in new window]
... またはハイブリッドGaAsモジュールに集積化することができます。
高いRF周波数では、PINダイオードの順方向抵抗は ...
japan.maxim-ic.com/appnotes.cfm/an_pk/3990 - 26k

マキシムのワイヤレス／RF ... [Open results in new window]
... 多くのGaAsアンプなどで必要となる負のバイアス電源が不要;
温度と負荷の変動に対して堅牢なデバイス性能; ...
japan.maxim-ic.com/appnotes.cfm/an_pk/335 - 42k

トリプルバンドのワイヤレス電話機でMAX2308 IF ... [Open results in new window]
... 長所の例: RFスイッチの挿入損失は、約3dB以下にまで低減されます。(
ほとんどのGaAs FET RFスイッチは、500MHz ...
japan.maxim-ic.com/appnotes.cfm/an_pk/2865 - 25k

Driving LEDs in Battery-Operated Applications: Controlling ... [Open results in new window]
... Epitaxial material based on gallium arsenide phosphide (GaAsP) produces red, green,
or yellow outputs (Figure 1). Material based on indium gallium nitrate ...
japan.maxim-ic.com/appnotes.cfm/an_pk/1804/ - 38k

LEDs Are Still Popular (and Improving) after All These Years ... [Open results in new window]
... RCA®. Work on gallium arsenide phosphide (GaAsP) led HP and Monsanto to
introduce the first commercial 655nm red LEDs in 1968. ...
japan.maxim-ic.com/appnotes.cfm/an_pk/1883/ - 56k

シリコンバイポーラICによって容易になるVCO設計 ... [Open results in new window]
... バイポーラプロセスが低ノイズ発振器設計での最適な選択肢
になります。GaAsデバイスは太刀打ちできません ...
japan.maxim-ic.com/appnotes.cfm/an_pk/698 - 43k

Selection of Ultra-Fast Recovery Diodes Used in Flyback Circuits ... [Open results in new window]
... In the realm of the technology development for the rectifiers, both GaAs and SiC
rectifiers do not exhibit the reverse recovery effects seen in silicon ...
japan.maxim-ic.com/appnotes.cfm/an_pk/849 - 42k