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Maxim >
Company >
Process Technologies and Wafer Fab
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BCDMOS
| Innovative Process Characteristics |
- Very high voltage, yet small, transistors provide up to 250V Breakdown
- Low on-resistance - just 0.6 ohm-mm*2 at 80V - allows integration of multiple low resistivity power FETs
- Double metal layer supports currents up to 10A
- Thin film and poly-poly caps are combined in silicon to integrate high-performance analog functions such as high-accuracy references, along with high-power devices.
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| Applications |
- High Power Conversion
- Telecom, Datacom, Automotive Power
- Computing Power
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